Image sensors with light channeling reflective layers therein

ABSTRACT

An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

REFERENCE TO PRIORITY APPLICATION

This U.S. non-provisional patent application claims priority under 35U.S.C. § 119 to Korean Patent Application No. 10-2015-0112536, filedAug. 10, 2015, in the Korean Intellectual Property Office, thedisclosure of which is incorporated herein by reference in its entirety.

BACKGROUND

The inventive concepts relate to an image sensor and, more particularly,to an image sensor with improved image quality.

Image sensors are semiconductor devices capable of converting an opticalimage into electrical signals. Image sensors may be categorized as anyone of charge coupled device (CCD) type image sensors and complementarymetal-oxide-semiconductor (CMOS) type image sensors.

As semiconductor devices have been highly integrated, image sensors havealso been highly integrated and sizes of pixels have been reduced. Thus,various researches are conducted for an image sensor capable of reducingcrosstalk and improving sensitivity in a fine area.

SUMMARY

Embodiments of the inventive concepts may provide an image sensorcapable of reducing or minimizing crosstalk. In some of theseembodiments, an image sensor includes a two-dimensional array of imagesensor pixels, which are formed in a semiconductor layer. In some ofthese embodiments, each image sensor pixel is formed in a substratehaving a corresponding semiconductor region therein. Each semiconductorregion contains at least first and second photoelectric conversionelements, which are disposed at side-by-side locations therein. Anelectrically insulating isolation region is also provided, which extendsat least partially through the semiconductor region and at leastpartially between the first and second photoelectric conversionelements, which may be configured respectively as first and secondsemiconductor regions of first conductivity type (e.g., N-type). Atleast one optically reflective region is also provided, which extends atleast partially through the semiconductor region and surrounds at leasta portion of at least one of the first and second photoelectricconversion elements. A semiconductor floating diffusion (FD) region(e.g., N-type region) is provided within the semiconductor region.According to some embodiments of the invention, the FD region extendsbetween the first and second photoelectric conversion elements andopposite the electrically insulating isolation region. In particular,the electrically insulating isolation region may extend between a backsurface of the semiconductor region, which is configured to receiveincident light thereon, and the floating diffusion region.

According to additional embodiments of the invention, the semiconductorregion may have a trench therein that surrounds at least uppermostportions of the first and second photoelectric conversion elements onfour sides thereof. In some of these embodiments, the opticallyreflective region may at least partially fill the trench and surroundthe uppermost portions of the first and second photoelectric conversionelements when viewed in a direction normal to a surface of thesemiconductor region. In still further embodiments of the invention, theelectrically insulating isolation region may include opticallyreflective material therein. The optically reflective region and theoptically reflective material may be metals selected from a groupconsisting of tungsten (W), copper (Cu) and aluminum (Al). According toadditional embodiments of the invention, the optically reflective regionextends entirely through the semiconductor region and surrounds thefirst and second photoelectric conversion elements on four sidesthereof. The optically reflective region may also be electricallyisolated from the semiconductor region by an electrically insulatingmaterial.

According to further embodiments of the invention, an image sensor mayinclude a semiconductor layer, a first isolation layer disposed in thesemiconductor layer to define a unit pixel region of the semiconductorlayer, a first photoelectric conversion element and a secondphotoelectric conversion element that are disposed in the semiconductorlayer of the unit pixel region, and a second isolation layer disposed inthe semiconductor layer of the unit pixel region and disposed betweenthe first photoelectric conversion element and the second photoelectricconversion element. The first isolation layer may surround the firstphotoelectric conversion element and the second photoelectric conversionelement, and the first isolation layer may include a vertical reflectivelayer.

In a further embodiment, the first isolation layer may include firstpatterns extending in one direction and second patterns disposed betweenthe first patterns so as to be connected to the first patterns. Thesecond isolation layer may be connected to the first patterns of thefirst isolation layer and may be spaced apart from the second patternsof the first isolation layer. The second isolation layer may include anadditional vertical reflective layer. The additional vertical reflectivelayer may be connected to the vertical reflective layers included in thefirst patterns of the first isolation layer.

In an additional embodiment, the first isolation layer may include firstpatterns extending in one direction and second patterns disposed betweenthe first patterns so as to be connected to the first patterns. Thesecond isolation layer may be spaced apart from the first patterns andthe second patterns of the first isolation layer. The second isolationlayer may also include an additional vertical reflective layer and aninsulating layer disposed between the additional vertical reflectivelayer and the semiconductor layer.

In an additional embodiment, the first isolation layer may furtherinclude a vertical insulating layer covering a surface of the verticalreflective layer. The vertical insulating layer may include the samematerial as the second isolation layer. The first isolation layer mayfurther include an air gap disposed in the vertical reflective layer.And, a width of the first isolation layer may be greater than that ofthe second isolation layer.

In an additional embodiment, the semiconductor layer may include a firstsurface on which light is incident, and a second surface opposite to thefirst surface. A distance between a bottom surface of the firstisolation layer and the second surface of the semiconductor layer may besmaller than a distance between a bottom surface of the second isolationlayer and the second surface of the semiconductor layer.

In an additional embodiment, the semiconductor layer may include a firstsurface on which light is incident, and a second surface opposite to thefirst surface. The first isolation layer may penetrate the semiconductorlayer, and a bottom surface of the second isolation layer may be spacedapart from the second surface of the semiconductor layer.

In an additional embodiment, the image sensor may further include afloating diffusion region disposed in the semiconductor layer of theunit pixel region. The floating diffusion region may be disposed betweenthe first photoelectric conversion element and the second photoelectricconversion element, and the floating diffusion region may verticallyoverlap with the second isolation layer but may not vertically overlapwith the first isolation layer.

In an embodiment, an image sensor may include a semiconductor layer, afirst photoelectric conversion element and a second photoelectricconversion element that are disposed in the semiconductor layer, a firstisolation layer disposed in the semiconductor layer and surrounding thefirst and second photoelectric conversion elements, a second isolationlayer disposed in the semiconductor layer and isolating the first andsecond photoelectric conversion elements from each other, and a colorfilter vertically overlapping with both the first photoelectricconversion element and the second photoelectric conversion element whenviewed from a plan view. The first isolation layer may include avertical reflective layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The inventive concepts will become more apparent in view of the attacheddrawings and accompanying detailed description.

FIG. 1 is a schematic plan view illustrating an image sensor accordingto embodiments of the inventive concepts.

FIGS. 2A and 2B are enlarged views of a portion ‘A’ of FIG. 1 toillustrate image sensors according to embodiments of the inventiveconcepts.

FIG. 3 is a cross-sectional view taken along a line I-I′ of FIG. 2A or2B to illustrate an image sensor according to embodiments of theinventive concepts.

FIG. 4 is a cross-sectional view taken along the line I-I′ of FIG. 2A or2B to illustrate an image sensor according to embodiments of theinventive concepts.

FIG. 5 is a cross-sectional view taken along the line I-I′ of FIG. 2A or2B to illustrate an image sensor according to embodiments of theinventive concepts.

FIG. 6 is a cross-sectional view taken along the line I-I′ of FIG. 2A or2B to illustrate an image sensor according to embodiments of theinventive concepts.

FIGS. 7 and 8 are enlarged views of the portion ‘A’ of FIG. 1 toillustrate image sensors according to embodiments of the inventiveconcepts.

FIG. 9 is a cross-sectional view taken along a line II-II′ of FIG. 7 or8 to illustrate an image sensor according to embodiments of theinventive concepts.

FIGS. 10A to 10D are cross-sectional views taken along the line I-I′ ofFIG. 2A or 2B to illustrate a method of manufacturing an image sensoraccording to embodiments of the inventive concepts.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The inventive concepts will now be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsof the inventive concepts are shown. The advantages and features of theinventive concepts and methods of achieving them will be apparent fromthe following exemplary embodiments that will be described in moredetail with reference to the accompanying drawings. It should be noted,however, that the inventive concepts are not limited to the followingexemplary embodiments, and may be implemented in various forms.Accordingly, the exemplary embodiments are provided only to disclose theinventive concepts and let those skilled in the art know the category ofthe inventive concepts. In the drawings, embodiments of the inventiveconcepts are not limited to the specific examples provided herein andare exaggerated for clarity. The same reference numerals or the samereference designators denote the same elements throughout thespecification.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to limit the invention. As usedherein, the singular terms “a,” “an” and “the” are intended to includethe plural forms as well, unless the context clearly indicatesotherwise. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items. It will beunderstood that the terms “comprises”, “comprising,”, “includes” and/or“including”, when used herein, specify the presence of stated features,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,integers, steps, operations, elements, components, and/or groupsthereof.

In addition, exemplary embodiments are described herein with referenceto cross-sectional views and/or plan views that are idealized exemplaryviews. In the drawings, the thicknesses of layers and regions areexaggerated for clarity. Accordingly, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, exemplary embodimentsshould not be construed as limited to the shapes of regions illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, an etching region illustrated as arectangle will, typically, have rounded or curved features. Thus, theregions illustrated in the figures are schematic in nature and theirshapes are not intended to illustrate the actual shape of a region of adevice and are not intended to limit the scope of example embodiments.

FIG. 1 is a schematic plan view illustrating an image sensor accordingto embodiments of the inventive concepts. FIGS. 2A and 2B are enlargedviews of a portion ‘A’ of FIG. 1 to illustrate image sensors accordingto embodiments of the inventive concepts. FIG. 3 is a cross-sectionalview taken along a line I-I′ of FIG. 2A or 2B to illustrate an imagesensor according to embodiments of the inventive concepts.

Referring to FIGS. 1, 2A, 2B, and 3, an image sensor may include unitpixels P arranged in a matrix form. At least one photoelectricconversion element 110 may be disposed in each of the unit pixels P. Theimage sensor may include a light receiving part P1, an interconnectionpart P2, and a light filter part P3. The light receiving part P1 mayinclude a semiconductor layer 100, the photoelectric conversion elements110, and a first isolation layer 104 defining unit pixel regions PX ofthe semiconductor layer 100. In an embodiment, the semiconductor layer100 may be a single-crystalline semiconductor substrate. In anembodiment, the semiconductor layer 100 may be an epitaxial layer formedby an epitaxial growth process. The semiconductor layer 100 may includea back surface 101 a and a front surface 101 b. The back surface 101 aof the semiconductor layer 100 may be a surface on which light isincident.

The photoelectric conversion elements 110 may be disposed in thesemiconductor layer 100. The photoelectric conversion elements 110 maybe two-dimensionally arranged in the semiconductor layer 100 toconstitute a two-dimensional array. The photoelectric conversionelements 110 may be doped with, for example, N-type dopants. Thephotoelectric conversion elements 110 may be more adjacent to the frontsurface 101 b of the semiconductor layer 100.

The photoelectric conversion element 110 may include a firstphotoelectric conversion element PD1 and a second photoelectricconversion element PD2 that are disposed in each of the unit pixelregions PX. In other words, two photoelectric conversion elements may bedisposed in one unit pixel region PX. Each of the first and secondphotoelectric conversion elements PD1 and PD2 may independently collectlight incident upon and passing through the back surface 101 a of thesemiconductor layer 100.

A floating diffusion region FD may be disposed in the semiconductorlayer 100. The floating diffusion region FD may be disposed in each ofthe unit pixel regions PX. In an embodiment, the floating diffusionregion FD may be disposed between the first photoelectric conversionelement PD1 and the second photoelectric conversion element PD2 in eachof the unit pixel regions PX. In an embodiment, the floating diffusionregion FD may be doped with N-type dopants.

The first isolation layer 104 and a second isolation layer 106 may bedisposed in the semiconductor layer 100. In an embodiment, the firstisolation layer 104 may surround the first and second photoelectricconversion elements PD1 and PD2 when viewed from a plan view. The firstisolation layer 104 may include first patterns PT1 extending in onedirection and second patterns PT2 disposed between the first patternsPT1 so as to be connected to the first patterns PT1 when viewed from aplan view. The first isolation layer 104 may not vertically overlap withthe floating diffusion region FD.

The first isolation layer 104 may include a multi-layer. In anembodiment, the first isolation layer 104 may include a verticalinsulating layer 104 a and a vertical reflective layer 104 b. Thevertical reflective layer 104 b may surround the first and secondphotoelectric conversion elements PD1 and PD2 disposed in each of theunit pixel regions PX when viewed from a plan view. The verticalinsulating layer 104 a may cover sidewalls and a bottom surface of thevertical reflective layer 104 b. For example, the vertical insulatinglayer 104 a may include at least one of a silicon oxide layer, a siliconnitride layer, a silicon oxynitride layer, or a hafnium oxide layer. Forexample, the vertical reflective layer 104 b may include a metalmaterial (e.g., tungsten, copper, and/or aluminum).

Alternatively, as illustrated in FIG. 4, the first isolation layer 104may include an air gap AG. The air gap AG may be disposed in thevertical reflective layer 104 b. In an embodiment, the air gap AG mayextend along the vertical reflective layer 104 b when viewed from a planview. In an embodiment, the air gap AG may not extend along the verticalreflective layer 104 b when viewed from a plan view. For example, theair gap AG may exist in a portion of the vertical reflective layer 104 bbut may not exist in another portion of the vertical reflective layer104 b.

Referring again to FIG. 3, the second isolation layer 106 may bedisposed in the semiconductor layer 100 of each of the unit pixelregions PX. The second isolation layer 106 may isolate the first andsecond photoelectric conversion elements PD1 and PD2 from each other inone unit pixel region PX. In an embodiment, as illustrated in FIG. 2A,the second isolation layer 106 may be spaced apart from the firstpatterns PT1 and the second patterns PT2 of the first isolation layer104 and may be parallel to the second patterns PT2. In an embodiment, asillustrated in FIG. 2B, the second isolation layer 106 may be in contactwith the first patterns PT1 of the first isolation layer 104 and may bespaced apart from the second patterns PT2 of the first isolation layer104. The second isolation layer 106 may be parallel to the secondpatterns PT2 of the first isolation layer 104. For example, the secondisolation layer 106 may be in contact with the vertical insulating layer104 a included in the first patterns PT1 of the first isolation layer104. The second isolation layer 106 may vertically overlap with thefloating diffusion region FD.

In an embodiment, the second isolation layer 106 may include the samematerial as the vertical insulating layer 104 a. Alternatively, thesecond isolation layer 106 may include a different material from thevertical insulating layer 104 a. For example, the second isolation layer106 may include at least one of a silicon oxide layer, a silicon nitridelayer, a silicon oxynitride layer, or a hafnium oxide layer.

A width W1 of the first isolation layer 104 may be different from awidth W2 of the second isolation layer 106. In an embodiment, the widthW1 of the first isolation layer 104 may be greater than the width W2 ofthe second isolation layer 106 (W1>W2). A depth of the first isolationlayer 104 may be substantially equal to that of the second isolationlayer 106. In other words, a bottom surface of the first isolation layer104 may be disposed at the substantially same level as a bottom surfaceof the second isolation layer 106. The bottom surface of the firstisolation layer 104 and the bottom surface of the second isolation layer106 may be disposed within the semiconductor layer 100. The bottomsurface of the first isolation layer 104 and the bottom surface of thesecond isolation layer 106 may be spaced apart from the front surface101 b of the semiconductor layer 100.

The interconnection part P2 may be disposed on the front surface 101 bof the semiconductor layer 100. The interconnection part P2 may includea plurality of stacked insulating layers and conductive patterns 202disposed between the insulating layers. In an embodiment, theinterconnection part P2 may include transfer gates TG. The transfergates TG may be disposed on the front surface 101 b of the semiconductorlayer 100. In an embodiment, two transfer gates TG may be disposed tocorrespond to the first photoelectric conversion element PD1 and thesecond photoelectric conversion element PD2 included in one unit pixelregion PX, respectively.

The light filter part P3 may be disposed on the back surface 101 a ofthe semiconductor layer 100. The light filter part P3 may include aninsulating layer 302, color filters 304, and micro-lenses 308.

The insulating layer 302 may be disposed on the back surface 101 a ofthe semiconductor layer 100. The insulating layer 302 may cover the backsurface 101 a of the semiconductor layer 100, a top surface of the firstisolation layer 104, and a top surface of the second isolation layer106. In an embodiment, the insulating layer 302 may function as ananti-reflection layer. For example, the insulating layer 302 may includeat least one of a silicon oxide layer, a silicon nitride layer, asilicon oxynitride layer, or a hafnium oxide layer.

Color filters 304 may be disposed on the insulating layer 302. The colorfilters 304 may correspond to the unit pixel regions PX, respectively.In an embodiment, one color filter 304 may vertically overlap with thefirst photoelectric conversion element PD1, the second photoelectricconversion element PD2, and the second isolation layer 106 which aredisposed in one unit pixel region PX.

The color filters 304 may include green filters Gb and Gr of FIG. 1,blue filters B of FIG. 1, and red filters R of FIG. 1. In FIG. 1, thecolor filters 304 may be arranged in a Bayer pattern. In the Bayerpattern, a half of the total pixels may be the green filters Gb and Grwhich are the most sensitive to human eyes.

The micro-lenses 308 may be disposed on the color filters 304. Forexample, the micro-lenses 308 may be disposed on the color filters 304,respectively.

A planarization layer 306 may be disposed between the color filters 304and the micro-lenses 308. The planarization layer 306 may cover topsurfaces of the color filters 304. In an embodiment, the planarizationlayer 306 may include at least one of a silicon oxide layer, a siliconnitride layer, or a silicon oxynitride layer. In an embodiment, theplanarization layer 306 may include an organic layer.

FIGS. 5 and 6 are cross-sectional views taken along the line I-I′ ofFIG. 2A or 2B to illustrate image sensors according to embodiments ofthe inventive concepts. In the embodiments of FIGS. 5 and 6, the sameelements as described in the embodiment of FIG. 3 will be indicated bythe same reference numerals or the same reference designators, and thedescriptions to the same elements as in the embodiment of FIG. 3 will beomitted or mentioned briefly for the purpose of ease and convenience inexplanation.

Referring to FIG. 5, a first isolation layer 104 and a second isolationlayer 106 may be disposed in the semiconductor layer 100. In the presentembodiment, the first isolation layer 104 and the second isolation layer106 may have depths different from each other. In an embodiment, adistance between a bottom surface of the first isolation layer 104 andthe front surface 101 b of the semiconductor layer 100 may be smallerthan a distance between a bottom surface of the second isolation layer106 and the front surface 101 b of the semiconductor layer 100. Forexample, the vertical reflective layer 104 b may penetrate thesemiconductor layer 100. In this case, the vertical insulating layer 104a may cover the sidewalls of the vertical reflective layer 104 b. Thesecond isolation layer 106 may not penetrate the semiconductor layer100.

Referring to FIG. 6, a distance between a bottom surface of the secondisolation layer 106 and the front surface 101 b of the semiconductorlayer 100 may be smaller than a distance between a bottom surface of thefirst isolation layer 104 and the front surface 101 b of thesemiconductor layer 100. In other words, the bottom surface of thesecond isolation layer 106 may be disposed at a lower level than thebottom surface of the first isolation layer 104.

FIGS. 7 and 8 are enlarged views of the portion ‘A’ of FIG. 1 toillustrate image sensors according to embodiments of the inventiveconcepts. FIG. 9 is a cross-sectional view taken along a line II-II′ ofFIG. 7 or 8 to illustrate an image sensor according to embodiments ofthe inventive concepts. In the embodiments of FIGS. 7 to 9, the sameelements as described in the embodiments of FIGS. 2A, 2B, and 3 will beindicated by the same reference numerals or the same referencedesignators, and the descriptions to the same elements as in theembodiments of FIGS. 2A, 2B, and 3 will be omitted or mentioned brieflyfor the purpose of ease and convenience in explanation.

Referring to FIGS. 7 to 9, a first isolation layer 104 and a secondisolation layer 106 may be disposed in the semiconductor layer 100. Inan embodiment, the first isolation layer 104 may define unit pixelregions PX of the semiconductor layer 100 and may surround first andsecond photoelectric conversion elements PD1 and PD2 disposed in each ofthe unit pixel regions PX. In an embodiment, the first isolation layer104 may include a multi-layer. The first isolation layer 104 may includea first vertical insulating layer 104 a and a first vertical reflectivelayer 104 b.

The second isolation layer 106 may be disposed in each of the unit pixelregions PX. In an embodiment, the second isolation layer 106 may isolatethe first and second photoelectric conversion elements PD1 and PD2 fromeach other in each of the unit pixel regions PX. In an embodiment, thesecond isolation layer 106 may include a multi-layer. The secondisolation layer 106 may include a second vertical insulating layer 106 aand a second vertical and optically reflective layer 106 b, whichoperates to confine and channel light incident the image sensor. Thesecond vertical insulating layer 106 a may cover sidewalls and a bottomsurface of the second vertical reflective layer 106 b.

In an embodiment, as illustrated in FIG. 7, the second isolation layer106 may be spaced apart from the first isolation layer 104. Thus, thesecond vertical reflective layer 106 b may also be spaced apart from thefirst vertical reflective layer 104 b. In an embodiment, as illustratedin FIG. 8, the second isolation layer 106 may be in contact with thefirst isolation layer 104. Thus, the second vertical reflective layer106 b may also be in contact with the first vertical reflective layer104 b. In other word, the second vertical reflective layer 106 b mayintersect the first vertical reflective layer 104 b included in thefirst patterns PT1 of the first isolation layer 104.

Referring again to FIGS. 7 to 9, a width W1 of the first isolation layer104 may be equal to a width W2 of the second isolation layer 106(W1=W2). In addition, a depth of the first isolation layer 104 may beequal to a depth of the second isolation layer 106. Even though notshown in the drawings, the widths and the depths of the first and secondisolation layers 104 and 106 may not be limited to these descriptionsaccording to the present embodiment but may be variously modified asdescribed with reference to FIGS. 3 to 6.

FIGS. 10A to 10D are cross-sectional views taken along the line I-I′ ofFIG. 2A or 2B to illustrate a method of manufacturing an image sensoraccording to embodiments of the inventive concepts.

Referring to FIGS. 2A, 2B, and 10A, a semiconductor layer 100 may beprovided. In an embodiment, the semiconductor layer 100 may be asingle-crystalline semiconductor substrate. In an embodiment, thesemiconductor layer 100 may be an epitaxial layer formed by an epitaxialgrowth process. The semiconductor layer 100 may include a back surface101 a and a front surface 101 b opposite to the back surface 101 a. Theback surface 101 a of the semiconductor layer 100 may be a surface onwhich light is incident.

Photoelectric conversion elements 110 may be formed in the semiconductorlayer 100. The photoelectric conversion elements 110 may be formed byperforming an ion implantation process through the front surface 101 bof the semiconductor layer 100. The photoelectric conversion elements110 may be doped with, for example, N-type dopants. The floatingdiffusion regions FD may be formed in the semiconductor layer 100. In anembodiment, each of the floating diffusion regions FD may be formedbetween a pair of the photoelectric conversion elements 110 disposed ineach of unit pixel regions PX to be defined. The floating diffusionregions FD may be doped with, for example, N-type dopants.

Transfer gates TG may be formed on the front surface 101 b of thesemiconductor layer 100. The transfer gates TG may be formed tocorrespond to the photoelectric conversion elements 110, respectively.

An interconnection structure 120 may be formed on the front surface 101b of the semiconductor layer 100. The interconnection structure 120 mayinclude a plurality of stacked insulating layers. In addition, theinterconnection structure 120 may further include metal interconnections202 formed in the stacked insulating layers. The insulating layers ofthe interconnection structure 120 may cover the transfer gates TG.

A support substrate 130 may be adhered to a top surface of theinterconnection structure 120. The support substrate 130 may supportdeposited layers in processes of manufacturing the image sensor. Forexample, the support substrate 130 may be a silicon substrate or a glasssubstrate.

Referring to FIGS. 2A, 2B, and 10B, the back surface 101 b of thesemiconductor layer 100 may be selectively etched to form first trenches140 a and second trenches 140 b in the semiconductor layer 100. Thefirst trenches 140 a may define unit pixel regions PX. The firsttrenches 140 a may be formed to surround two photoelectric conversionelements 110 adjacent to each other on all four sides thereof. In otherword, the two photoelectric conversion elements 110 may be disposed ineach of the unit pixel regions PX. Each of the second trenches 140 b maybe formed in each of the unit pixel regions PX of the semiconductorlayer 100. Each of the second trenches 140 b may physically separate thetwo photoelectric conversion elements 110 disposed in each unit pixelregion PX from each other. Widths of the first trenches 140 a may begreater than those of the second trenches 140 b. Alternatively, thewidths of the first trenches 140 a may be equal to those of the secondtrenches 140 b.

Referring to FIGS. 2A, 2B, and 10C, an isolation insulating layer 151may be formed on the back surface 101 a of the semiconductor layer 100.In an embodiment, the isolation insulating layer 151 may be conformallyformed on inner surfaces of the first trenches 140 a but may completelyfill the second trenches 104 b. When the widths of the second trenches140 b are smaller than those of the first trenches 140 a, the secondtrenches 140 b may be completely filled with the isolation insulatinglayer 151 while the isolation insulating layer 151 is conformally formedon the inner surfaces of the first trenches 140 a. Thus, empty regionsmay remain in the first trenches 140 a after the formation of theisolation insulating layer 151. For example, the isolation insulatinglayer 151 may include at least one of a silicon oxide layer, a siliconnitride layer, a silicon oxynitride layer, or a hafnium oxide layer.

A reflective layer 153 may be formed on the isolation insulating layer151. The reflective layer 153 may cover a top surface of the isolationinsulating layer 151 and may completely fill the remaining empty regionsof the first trenches 140 a. In an embodiment, the reflective layer 153may not completely fill the first trenches 140 a partially filled withthe isolation insulating layer 151 since the first trenches 140 a arenarrow. In this case, an air gap AG of FIG. 4 may be formed in thereflective layer 153 in the first trench 140 a. For example, thereflective layer 153 may include a conductive material (e.g., tungsten,copper, or aluminum).

Referring to FIG. 10D, an etching process may be performed on thereflective layer 153 to form first isolation layers 104 in the firsttrenches 140 a and second isolation layers 106 in the second trenches140 b. The etching process may be performed until the back surface 101 aof the semiconductor layer 100 is exposed. The etching process mayinclude a chemical mechanical polishing (CMP) process and/or anetch-back process. The first isolation layer 104 may have amulti-layered structure. For example, the first isolation layer 104 mayinclude a vertical insulating layer 104 a and a vertical reflectivelayer 104 b. The second isolation layer 106 may have a single-layeredstructure. The second isolation layer 106 may include the same materialas the vertical insulating layer 104 a.

Referring again to FIGS. 2A, 2B, and 3, an insulating layer 302 may beformed on the back surface 101 a of the semiconductor layer 100. Theinsulating layer 302 may cover the back surface 101 a of thesemiconductor layer 100, a top surface of the first isolation layer 104,and a top surface of the second isolation layer 106. For example, theinsulating layer 302 may include at least one of a silicon oxide layer,a silicon nitride layer, a silicon oxynitride layer, or a hafnium oxidelayer.

Color filters 304 may be formed on the insulating layer 302. The colorfilters 304 may correspond to the unit pixel regions PX, respectively.In an embodiment, the color filters 304 may be arranged in the Bayerpattern, as illustrated in FIG. 1. A planarization layer 306 may beformed on the color filters 304. In an embodiment, the planarizationlayer 306 may include at least one of a silicon oxide layer, a siliconnitride layer, or a silicon oxynitride layer. In an embodiment, theplanarization layer 306 may include an organic layer. Micro-lenses 308may be formed on the planarization layer 306. The support substrate 130may be removed after the formation of the micro-lenses 308.

As described above, the image sensor according to embodiments of theinventive concepts may include the first isolation layer defining theunit pixel region and including the vertical reflective layer, and thesecond isolation layer disposed in the unit pixel region to isolate thetwo photoelectric conversion elements from each other. If light incidenton the semiconductor layer is irregularly reflected by the secondisolation layer, the irregularly reflected light may be reflected by thevertical reflective layer so as to be incident on the photoelectricconversion element of a desired unit pixel region. Thus, crosstalkbetween unit pixels may be inhibited or prevented to improve the imagequality of the image sensor.

While the inventive concepts have been described with reference toexample embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirits and scopes of the inventive concepts. Therefore, itshould be understood that the above embodiments are not limiting, butillustrative. Thus, the scopes of the inventive concepts are to bedetermined by the broadest permissible interpretation of the followingclaims and their equivalents, and shall not be restricted or limited bythe foregoing description.

What is claimed is:
 1. An image sensor pixel, comprising: a substratehaving a semiconductor region therein containing at least first andsecond photoelectric conversion elements disposed side-by-side in thesemiconductor region and an electrically insulating isolation regionthat extends at least partially through the semiconductor region and atleast partially between the first and second photoelectric conversionelements; a micro-lens on a light receiving surface of said substrate; asemiconductor floating diffusion region, which extends in thesemiconductor region and between the first and second photoelectricconversion elements; and an optically reflective region extending atleast partially through the semiconductor region and surrounding atleast a portion of at least one of the first and second photoelectricconversion elements; wherein the micro-lens vertically overlaps with thefirst photoelectric conversion element, the second photoelectricconversion element, and the electrically insulating isolation region. 2.The image sensor pixel of claim 1, wherein the semiconductor floatingdiffusion region and the electrically insulating isolation region extendopposite each other within the semiconductor region.
 3. The image sensorpixel of claim 1, wherein the semiconductor region has a trench thereinthat surrounds at least uppermost portions of the first and secondphotoelectric conversion elements on four sides thereof; wherein saidoptically reflective region at least partially fills the trench andsurrounds the uppermost portions of the first and second photoelectricconversion elements when viewed in a direction normal to a surface ofthe semiconductor region.
 4. The image sensor pixel of claim 1, whereinsaid electrically insulating isolation region comprises an opticallyreflective material therein.
 5. The image sensor pixel of claim 1,wherein said semiconductor floating diffusion region is verticallyaligned to a center of said micro-lens; and wherein both the first andsecond photoelectric conversion elements extend opposite the micro-lens.6. An image sensor comprising: a semiconductor layer having an array ofmicro-lenses on a light receiving surface thereof; a first isolationlayer disposed in the semiconductor layer to define a unit pixel regionof the semiconductor layer; a first photoelectric conversion element anda second photoelectric conversion element that are disposed in thesemiconductor layer of the unit pixel region; and a second isolationlayer disposed in the semiconductor layer of the unit pixel region, thesecond isolation layer disposed between the first photoelectricconversion element and the second photoelectric conversion element andaligned vertically to a center of a corresponding micro-lens within thearray of micro-lenses, wherein the first isolation layer surrounds thefirst photoelectric conversion element and the second photoelectricconversion element, and wherein the first isolation layer comprises avertical reflective layer and an air gap within the vertical reflectivelayer.
 7. The image sensor of claim 6, wherein the first isolation layercomprises: first patterns extending in one direction; and secondpatterns disposed between the first patterns so as to be connected tothe first patterns, and wherein the second isolation layer is connectedto the first patterns of the first isolation layer and is spaced apartfrom the second patterns of the first isolation layer.
 8. The imagesensor of claim 7, wherein the second isolation layer comprises anadditional vertical reflective layer, wherein the additional verticalreflective layer is connected to the vertical reflective layers includedin the first patterns of the first isolation layer.
 9. The image sensorof claim 6, wherein the first isolation layer comprises: first patternsextending in one direction; and second patterns disposed between thefirst patterns so as to be connected to the first patterns, and whereinthe second isolation layer is spaced apart from the first patterns andthe second patterns of the first isolation layer.
 10. The image sensorof claim 6, wherein the second isolation layer comprises an additionalvertical reflective layer; and an insulating layer disposed between theadditional vertical reflective layer and the semiconductor layer. 11.The image sensor of claim 6, wherein the first isolation layer furthercomprises a vertical insulating layer covering a surface of the verticalreflective layer, and wherein the vertical insulating layer includes thesame material as the second isolation layer.
 12. The image sensor ofclaim 6, wherein the semiconductor layer comprises: a first surface onwhich light is incident; and a second surface opposite to the firstsurface, and wherein a distance between a bottom surface of the firstisolation layer and the second surface of the semiconductor layer issmaller than a distance between a bottom surface of the second isolationlayer and the second surface of the semiconductor layer.
 13. The imagesensor of claim 6, wherein the semiconductor layer comprises: a firstsurface on which light is incident; and a second surface opposite to thefirst surface, wherein the first isolation layer penetrates thesemiconductor layer, and wherein a bottom surface of the secondisolation layer is spaced apart from the second surface of thesemiconductor layer.
 14. The image sensor of claim 6, furthercomprising: a floating diffusion region disposed in the semiconductorlayer of the unit pixel region, wherein the floating diffusion region isdisposed between the first photoelectric conversion element and thesecond photoelectric conversion element, wherein the floating diffusionregion vertically overlaps with the second isolation layer but does notvertically overlap with the first isolation layer, and wherein thefloating diffusion region is vertically aligned to the center of thecorresponding micro-lens within the array of micro-lenses.
 15. The imagesensor of claim 6, wherein the semiconductor layer comprises: a firstsurface on which light is incident; and a second surface opposite to thefirst surface, the image sensor further comprising: an interconnectionstructure disposed on the second surface of the semiconductor layer; acolor filter disposed on the first surface of the semiconductor layerand vertically overlapping with the first and second photoelectricconversion elements; and wherein the array of micro-lenses is on thecolor filter.
 16. The image sensor of claim 6, wherein both the firstand second photoelectric conversion elements extend opposite thecorresponding micro-lens within the array of micro-lenses.
 17. An imagesensor comprising: a semiconductor layer; a first photoelectricconversion element and a second photoelectric conversion elementdisposed in the semiconductor layer; a semiconductor floating diffusionregion extending between the first and second photoelectric conversionelements; a first isolation layer disposed in the semiconductor layer,the first isolation layer surrounding the first and second photoelectricconversion elements; a second isolation layer disposed in thesemiconductor layer, the second isolation layer isolating the first andsecond photoelectric conversion elements from each other; and a colorfilter vertically overlapping with both the first photoelectricconversion element and the second photoelectric conversion element whenviewed from a plan view, wherein the first isolation layer comprises avertical reflective layer; and wherein a width of the first isolationlayer is greater than that of the second isolation layer; wherein saidsemiconductor layer has an array of micro-lenses on a light receivingsurface thereof; wherein said semiconductor floating diffusion region isvertically aligned to a center of a corresponding micro-lens within thearray of micro-lenses; and wherein both the first and secondphotoelectric conversion elements extend opposite the correspondingmicro-lens within the array of micro-lenses.
 18. The image sensor ofclaim 17, wherein the first isolation layer further comprises a verticalinsulating layer disposed between the vertical reflective layer and thesemiconductor layer, and wherein the vertical insulating layer includesthe same material as the second isolation layer.
 19. The image sensor ofclaim 17, wherein the second isolation layer comprises an additionalvertical reflective layer and an insulating layer disposed between theadditional vertical reflective layer and the semiconductor layer.